The NVMFS4C05NT3G is a 1 N-Channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.61W and is RoHS compliant. The device features a drain to source voltage of 30V, a continuous drain current of 116A, and a drain to source resistance of 2.3mR. It is packaged in a surface mount package and is available in quantities of 5000.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVMFS4C05NT3G technical specifications.
General
| Continuous Drain Current (ID) | 116A |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.972nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.61W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFS4C05NT3G Datasheet
Download the complete datasheet for Onsemi NVMFS4C05NT3G to view detailed technical specifications.
No datasheet is available for this part.