Single P-Channel Power MOSFET featuring a -60V drain-source voltage and a continuous drain current of -64A. This device offers a low on-resistance of 14 mOhm at a 10V gate-source voltage. Designed for logic-level gate drive, it is packaged in an SO8-FL (DFN5 5x6) surface-mount configuration. The MOSFET has 5 terminals with dual terminal positions and a single active element.
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Onsemi NVMFS5113PLT1G technical specifications.
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
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