Single P-Channel Power MOSFET featuring a -60V drain-source voltage and a continuous drain current of -64A. This device offers a low on-resistance of 14 mOhm at a 10V gate-source voltage. Designed for logic-level gate drive, it is packaged in an SO8-FL (DFN5 5x6) surface-mount configuration. The MOSFET has 5 terminals with dual terminal positions and a single active element.
Quick Jump:
Technical Specifications
Onsemi NVMFS5113PLT1G technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi NVMFS5113PLT1G Datasheet
Download the complete datasheet for Onsemi NVMFS5113PLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.