Single P-Channel Power MOSFET featuring a -60V drain-source voltage and a continuous drain current of -64A. This device offers a low on-resistance of 14 mOhm at a 10V gate-source voltage. Designed for logic-level gate drive, it is packaged in an SO8-FL (DFN5 5x6) surface-mount configuration. The MOSFET has 5 terminals with dual terminal positions and a single active element.
Quick Jump:
Technical Specifications
Onsemi NVMFS5113PLT1G technical specifications.
General
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Onsemi NVMFS5113PLT1G Datasheet
Download the complete datasheet for Onsemi NVMFS5113PLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.