Single N-Channel Power MOSFET featuring 40V Drain-Source Voltage (Vdss) and 127A Continuous Drain Current (ID). This surface-mount device offers a low Drain-Source On-Resistance (Rds On) of 2.5mΩ at 10Vgs. With a maximum power dissipation of 83W and a wide operating temperature range from -55°C to 175°C, it is suitable for demanding applications. The MOSFET boasts fast switching characteristics with a turn-on delay of 12ns and a fall time of 8.4ns. Packaged in DFN for efficient thermal management, it is supplied on tape and reel.
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Onsemi NVMFS5C442NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 127A |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 8.4ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
No datasheet is available for this part.
