This single N-channel power MOSFET is rated for 150 V drain-to-source voltage and 165 A continuous drain current at TC = 25 °C. It is supplied in a DFNW8 package with an 8 x 8 mm footprint and specifies a maximum drain-to-source on-resistance of 4.45 mΩ at VGS = 10 V. The device has a typical total gate charge of 79 nC, a junction-to-case thermal resistance of 0.5 °C/W, and an operating junction and storage temperature range of -55 °C to +175 °C. It is AEC-Q101 qualified, PPAP capable, Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NVMTS4D3N15MC technical specifications.
| Transistor Type | Single N-Channel MOSFET |
| Drain-to-Source Voltage | 150V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (TC = 25°C) | 165A |
| Power Dissipation (TC = 25°C) | 292W |
| Operating Junction Temperature Range | -55 to +175°C |
| Single Pulse Avalanche Energy | 3390mJ |
| Junction-to-Case Thermal Resistance | 0.5°C/W |
| Junction-to-Ambient Thermal Resistance | 31.4°C/W |
| Drain-to-Source On-Resistance | 4.45 maxmΩ |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Input Capacitance | 6514 typpF |
| Output Capacitance | 1750 typpF |
| Reverse Transfer Capacitance | 12.5 typpF |
| Total Gate Charge | 79 typnC |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
