Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 30A continuous drain current. This logic-level device offers a low 10.5 mOhm drain-to-source resistance. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 12ns turn-on delay and 4ns fall time. Packaged in a compact 3.3x3.3mm WDFN8 with 0.65mm pitch, this RoHS and Halogen Free component is supplied on a 1500-piece tape and reel.
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Onsemi NVTFS4823NTAG technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 21W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Width | 3.15mm |
| RoHS | Compliant |
No datasheet is available for this part.
