Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. Offers a low 10.5mOhm drain-source resistance at a logic-level gate drive. Designed for high-efficiency switching with fast switching times, including a 12ns turn-on delay and 4ns fall time. Housed in a compact WDFN8 3.3x3.3mm package with a low profile of 0.75mm, suitable for demanding applications. Operates across a wide temperature range from -55°C to 175°C and is RoHS and Halogen Free compliant.
Onsemi NVTFS4823NTWG technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 21W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Width | 3.15mm |
| RoHS | Compliant |
No datasheet is available for this part.
