The NVTFS4C10NTAG is a single N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 28W and is RoHS compliant. The device features a drain to source resistance of 7.4mR and a gate to source voltage of 20V. It is packaged in a WDFN-8 package and is available in quantities of 1500 per reel.
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVTFS4C10NTAG technical specifications.
General
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 993pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTFS4C10NTAG Datasheet
Download the complete datasheet for Onsemi NVTFS4C10NTAG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.