Single P-Channel Power MOSFET featuring -60V drain-source breakdown voltage and 52mΩ drain-source resistance. This component offers a continuous drain current of 6A and a maximum power dissipation of 21W, operating across a wide temperature range of -55°C to 175°C. Designed with a WDFN8 3.3x3.3 package and tape and reel packaging, it boasts fast switching characteristics with turn-on delay of 14ns and fall time of 36ns. This RoHS compliant device is lead and halogen free.
PolarityP-CHANNEL
Power21W
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Technical Specifications
Onsemi NVTFS5116PLTAG technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.258nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 21W |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 21W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTFS5116PLTAG Datasheet
Download the complete datasheet for Onsemi NVTFS5116PLTAG to view detailed technical specifications.
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