Single N-Channel Power MOSFET with 60V Drain to Source Breakdown Voltage and 11A Continuous Drain Current. Features 11.5mOhm Rds On Max at 10Vgs, 2.3V Threshold Voltage, and 1.462nF Input Capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.2W. Packaged in a compact WDFN8 3.3x3.3mm surface-mount package, supplied on a 1500-piece tape and reel. This RoHS compliant component offers fast switching characteristics with turn-on delay of 10ns and fall time of 22ns.
PolarityN-CHANNEL
Power21W
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Technical Specifications
Onsemi NVTFS5820NLTAG technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 11.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 1.462nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 21W |
| Radiation Hardening | No |
| Rds On Max | 11.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 10ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTFS5820NLTAG Datasheet
Download the complete datasheet for Onsemi NVTFS5820NLTAG to view detailed technical specifications.
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