Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers a low 24mOhm drain-source resistance at a logic-level gate drive. Designed for high-efficiency switching with fast switching times, including a 9ns turn-on delay and 21ns fall time. Packaged in a compact WDFN8 3.3x3.3mm surface-mount package, this component operates from -55°C to 175°C and is halogen-free and RoHS compliant.
PolarityN-CHANNEL
Power22W
Quick Jump:
Technical Specifications
Onsemi NVTFS5826NLTWG technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 24mR |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 22W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTFS5826NLTWG Datasheet
Download the complete datasheet for Onsemi NVTFS5826NLTWG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.