Dual N-Channel JFET, 30V Vdss, 250mA ID, 1.5Ω Rds On. Features 17ns turn-on delay, 82ns fall time, and 94ns turn-off delay. Operates from -55°C to 150°C with 272mW max power dissipation. Housed in a 6-lead SOT-363 package, supplied on a 3000-piece tape and reel. Lead-free and RoHS compliant.
PackageSOT-363-6
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Technical Specifications
Onsemi NVTJD4001NT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 82ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 33pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 272mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTJD4001NT1G Datasheet
Download the complete datasheet for Onsemi NVTJD4001NT1G to view detailed technical specifications.
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