NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage, 3A maximum collector current, and 450mV collector-emitter saturation voltage. Operates with a 75MHz transition frequency and offers a minimum hFE of 100. Packaged in a SOT-223 case, this lead-free, RoHS-compliant component is supplied on a 4000-piece tape and reel.
Frequency75MHz
PackageSOT-223
Current Rating3A
MountingSurface Mount
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Technical Specifications
Onsemi NZT560 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
450mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
450mV
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
1.6mm
hFE Min
100
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
60V
Weight
0.188g
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NZT560 Datasheet
Download the complete datasheet for Onsemi NZT560 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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