NPN Bipolar Junction Transistor (BJT) for current driving applications. Features a 60V collector-emitter breakdown voltage and a 4A maximum collector current. Operates with a 75MHz transition frequency and a minimum hFE of 75. Packaged in SOT-223 for surface mounting, supplied on a 4000-piece tape and reel. RoHS compliant and lead-free.
Frequency75MHz
PackageSOT-223
Current Rating4A
MountingSurface Mount
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Technical Specifications
Onsemi NZT651 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
hFE Min
75
Lead Free
Lead Free
Max Breakdown Voltage
60V
Max Collector Current
4A
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.2W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
60V
Weight
0.188g
Compliance
RoHS
Compliant
Datasheet
Onsemi NZT651 Datasheet
Download the complete datasheet for Onsemi NZT651 to view detailed technical specifications.
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