NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Packaged in bulk, this lead-free and RoHS compliant component is ideal for general-purpose amplification and switching applications.
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Onsemi P2N2222AG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 600mA |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 5.33mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Weight | 0.070548oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi P2N2222AG to view detailed technical specifications.
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