
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and 75V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a minimum DC current gain (hFE) of 100. Operates with a transition frequency of 250MHz and a maximum power dissipation of 625mW. Packaged in a TO-92 3-lead through-hole mount configuration, this lead-free and RoHS-compliant component is supplied in bulk packaging.
Onsemi PN100 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 45V |
| Weight | 0.201g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi PN100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
