
The PN2222 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 600mA. It has a gain bandwidth product of 250MHz and a maximum power dissipation of 625mW. The transistor is rated for operation between -55°C and 150°C and is available in bulk packaging with 5000 units per package.
Onsemi PN2222 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.6V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 35 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi PN2222 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
