
NPN bipolar junction transistor in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current of 600mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Onsemi PN2222_J61Z technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi PN2222_J61Z to view detailed technical specifications.
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