NPN Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and 500mA continuous collector current. Features a 300MHz transition frequency and a minimum DC current gain (hFE) of 100. Packaged in a TO-92-3 through-hole mount configuration, supplied on a 2000-piece tape and reel. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi PN2222ATFR technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
5.33mm
hFE Min
100
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi PN2222ATFR Datasheet
Download the complete datasheet for Onsemi PN2222ATFR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
