NPN bipolar junction transistor (BJT) in TO-92 package, featuring a 30V collector-emitter breakdown voltage and 600mA maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 625mW. The device is lead-free and RoHS compliant.
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Onsemi PN2222TFR technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | PN2222 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| RoHS | Compliant |
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