The PN2369_D27Z is an NPN transistor with a collector-emitter breakdown voltage of 15V and a maximum collector current of 200mA. It has a maximum power dissipation of 350mW and is packaged in a TO-92-3 case for through-hole mounting. The transistor operates over a temperature range of -55°C to 150°C. It is available in quantities of 2000 per reel.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
Power350mW
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Technical Specifications
Onsemi PN2369_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 40 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN2369_D27Z Datasheet
Download the complete datasheet for Onsemi PN2369_D27Z to view detailed technical specifications.
No datasheet is available for this part.