PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector current of 800mA and a collector-emitter voltage of 60V. Operates with a transition frequency of 200MHz and a minimum hFE of 100. Packaged in a TO-92-3 through-hole mount configuration, supplied on a 2000-piece tape and reel. Rated for operation between -55°C and 150°C.
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Onsemi PN2907ATF technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 100 |
| Length | 5.2mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 800mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
| Width | 4.19mm |
| RoHS | Compliant |
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