PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -60V Collector Base Voltage (VCBO) and 40V Collector Emitter Voltage (VCEO). Offers a maximum collector current of 800mA and a minimum hFE of 100. Packaged in TO-92 for through-hole mounting, this lead-free and RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
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Onsemi PN2907BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 5.33mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 800mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Weight | 0.179g |
| Width | 4.19mm |
| RoHS | Compliant |
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