PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current of 800mA. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C. This component is RoHS compliant and lead-free.
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Onsemi PN2907TA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 800mA |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PN2907 |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
| RoHS | Compliant |
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