The PN3646_D75Z is a TO-92-3 packaged NPN bipolar junction transistor from Onsemi. It has a collector base voltage rating of 40V and a maximum collector current of 300mA. The transistor can operate at temperatures between -55°C and 150°C. It has a minimum current gain of 40 and a maximum power dissipation of 350mW. The PN3646_D75Z is available in an ammo pack with 2000 units per package.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
Power350mW
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Technical Specifications
Onsemi PN3646_D75Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 40 |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi PN3646_D75Z Datasheet
Download the complete datasheet for Onsemi PN3646_D75Z to view detailed technical specifications.
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