The PN4250 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. It is packaged in a TO-92 case and is suitable for through-hole mounting. The transistor has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. It is lead-free and available in a bulk packaging quantity of 2000 units.
PackageTO-92
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi PN4250 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| DC Rated Voltage | -40V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi PN4250 Datasheet
Download the complete datasheet for Onsemi PN4250 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.