Reflective phototransistor with a 940nm wavelength, designed for general optical sensing applications. Features a 30V collector-emitter breakdown voltage and a 50mA forward current, with a maximum collector current of 1mA. Operates within a temperature range of -40°C to 85°C and offers a response time of 50µs. This through-hole mounted component utilizes a phototransistor output and is supplied in a 100-piece bulk package.
PackageRadial
MountingThrough Hole
Power100mW
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Technical Specifications
Onsemi QRD1114 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Contact Plating | Tin, Matte |
| Fall Time | 50us |
| Forward Current | 50mA |
| Height | 4.65mm |
| Input Current | 20mA |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Collector Current | 1mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Package Quantity | 100 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reach SVHC Compliant | No |
| Response Time | 50us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage (DC) | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 1.27mm |
| Wavelength | 940nm |
| Weight | 0g |
| Width | 4.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QRD1114 Datasheet
Download the complete datasheet for Onsemi QRD1114 to view detailed technical specifications.
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