Reflective phototransistor with a 940nm wavelength, designed for general optical sensing applications. Features a 30V collector-emitter breakdown voltage and a 50mA forward current, with a maximum collector current of 1mA. Operates within a temperature range of -40°C to 85°C and offers a response time of 50µs. This through-hole mounted component utilizes a phototransistor output and is supplied in a 100-piece bulk package.
PackageRadial
MountingThrough Hole
Power100mW
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Technical Specifications
Onsemi QRD1114 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Contact Plating
Tin, Matte
Fall Time
50us
Forward Current
50mA
Height
4.65mm
Input Current
20mA
Lead Free
Lead Free
Length
6.1mm
Max Collector Current
1mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
1.7V
Output Type
Phototransistor
Package Quantity
100
Packaging
Bulk
Power Dissipation
100mW
Reach SVHC Compliant
No
Response Time
50us
Reverse Breakdown Voltage
5V
Reverse Voltage (DC)
5V
RoHS Compliant
Yes
Sensing Distance
1.27mm
Wavelength
940nm
Weight
0g
Width
4.39mm
Compliance
RoHS
Compliant
Datasheet
Onsemi QRD1114 Datasheet
Download the complete datasheet for Onsemi QRD1114 to view detailed technical specifications.
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