Reflective phototransistor with 1mm sensing distance, operating at 940nm wavelength. Features a 30V collector-emitter breakdown voltage and 50mA forward current. This miniature SMT component offers a 20µs response time and 75mW power dissipation. Packaged in tape and reel for surface mounting, it operates between -40°C and 85°C.
Onsemi QRE1113GR technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Contact Plating | Tin, Matte |
| Fall Time | 20us |
| Forward Current | 50mA |
| Height | 1.7mm |
| Input Current | 50mA |
| Lead Free | Lead Free |
| Length | 3.6mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 75mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 75mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Response Time | 20us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage (DC) | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 1mm |
| Wavelength | 940nm |
| Weight | 0.078g |
| Width | 2.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
