NPN phototransistor for optical sensing applications, featuring a 35V collector-emitter breakdown voltage and 15mA maximum collector current. This surface mount component utilizes a PLCC package with a flat lens, offering a 120° viewing angle and 880nm wavelength sensitivity. Operating at 5V, it boasts a 165mW power dissipation and a wide temperature range from -55°C to 100°C. The device is RoHS compliant and designed for efficient light detection.
PackagePLCC
MountingSurface Mount
PolarityNPN
Power165mW
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Technical Specifications
Onsemi QSB320 technical specifications.
General
Package/Case
PLCC
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
30V
Fall Time
8us
Lead Free
Lead Free
Lens Style
Flat
Max Breakdown Voltage
35V
Max Collector Current
15mA
Max Input Current
100uA
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Power Dissipation
165mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Consumption
165mW
Power Dissipation
165mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
120°
DC Rated Voltage
35V
Wavelength
880nm
Weight
0.1287g
Compliance
RoHS
Compliant
Datasheet
Onsemi QSB320 Datasheet
Download the complete datasheet for Onsemi QSB320 to view detailed technical specifications.
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