Subminiature surface mount infrared phototransistor featuring a 30V collector-emitter breakdown voltage and 2mA maximum collector current. This NPN silicon device operates within a -25°C to 85°C temperature range, with a 75mW power dissipation. The phototransistor has a 940nm wavelength sensitivity and a 24° viewing angle, housed in a 2.7mm x 2.2mm x 3mm SMD/SMT package with a domed, transparent lens. Packaging is provided on a 1000-count tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power75mW
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Technical Specifications
Onsemi QSB363GR technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
15us
Height
3mm
Lead Free
Lead Free
Length
2.7mm
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Breakdown Voltage
30V
Max Collector Current
2mA
Max Operating Temperature
85°C
Min Operating Temperature
-25°C
Max Power Dissipation
75mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
75mW
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
940nm
Weight
0.09g
Width
2.2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi QSB363GR Datasheet
Download the complete datasheet for Onsemi QSB363GR to view detailed technical specifications.
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