Onsemi
QSD122A4R0
The QSD122, QSD123, QSD124 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD122A4R0 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 5V |
| Fall Time | 7000ns |
| Max Collector Current | 1mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 1200 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 880nm |
| Weight | 0.284g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSD122A4R0 Datasheet
Download the complete datasheet for Onsemi QSD122A4R0 to view detailed technical specifications.
No datasheet is available for this part.