Silicon NPN phototransistor with 880nm peak sensitivity, featuring a 30V collector-emitter breakdown voltage and 100mW maximum power dissipation. This through-hole component, housed in a 2-pin T-1 3/4 radial package with a domed transparent lens, operates from -40°C to 100°C. It offers a 7µs fall time and a 24° viewing angle, with a maximum input current of 100µA.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD123 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
7us
Height
9.27mm
Input Current
100uA
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Input Current
100uA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Output Voltage
30V
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
24°
DC Rated Voltage
30V
Wavelength
880nm
Weight
0.284g
Compliance
RoHS
Compliant
Datasheet
Onsemi QSD123 Datasheet
Download the complete datasheet for Onsemi QSD123 to view detailed technical specifications.
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