The QSD123A4R0 is a T-1 3/4 NPN phototransistor with a collector-emitter breakdown voltage of 30V and a collector-emitter saturation voltage of 400mV. It has a maximum collector current of 16mA and a maximum power dissipation of 100mW. The device is RoHS compliant and has a maximum operating temperature of 100°C and a minimum operating temperature of -40°C. It is packaged in a tape and reel format and has a viewing angle of 24°.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD123A4R0 technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 5V |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 16mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 880nm |
| Weight | 0.284g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSD123A4R0 Datasheet
Download the complete datasheet for Onsemi QSD123A4R0 to view detailed technical specifications.
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