The QSD123A4R0 is a T-1 3/4 NPN phototransistor with a collector-emitter breakdown voltage of 30V and a collector-emitter saturation voltage of 400mV. It has a maximum collector current of 16mA and a maximum power dissipation of 100mW. The device is RoHS compliant and has a maximum operating temperature of 100°C and a minimum operating temperature of -40°C. It is packaged in a tape and reel format and has a viewing angle of 24°.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi QSD123A4R0 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi QSD123A4R0 technical specifications.
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 5V |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 16mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Viewing Angle | 24° |
| Wavelength | 880nm |
| Weight | 0.284g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi QSD123A4R0 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
