NPN silicon phototransistor with 880nm peak sensitivity, housed in a T-1 3/4 package with a domed, transparent lens. Features a 30V collector-emitter breakdown voltage, 100mW maximum power dissipation, and a 24° viewing angle. Operates across a -40°C to 100°C temperature range with a 5V operating supply voltage. This through-hole component offers a 7000ns fall time and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD124 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
7000ns
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Input Current
100uA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Output Voltage
30V
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
880nm
Weight
0.284g
Compliance
RoHS
Compliant
Datasheet
Onsemi QSD124 Datasheet
Download the complete datasheet for Onsemi QSD124 to view detailed technical specifications.
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