General purpose NPN silicon infrared phototransistor in a TO-18 package. Features a 30V collector-emitter breakdown voltage and 100mW maximum power dissipation. Operates with a 5V supply voltage and detects wavelengths up to 880nm. Includes a domed, transparent lens with a 40° viewing angle. Designed for through-hole mounting and operates across a temperature range of -40°C to 100°C. Packaged in bulk quantities of 250 units.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSD722 technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
8000ns
Lead Free
Lead Free
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Power Dissipation
100mW
Radiation Hardening
No
RoHS Compliant
No
Viewing Angle
40°
Wavelength
880nm
Weight
0g
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi QSD722 Datasheet
Download the complete datasheet for Onsemi QSD722 to view detailed technical specifications.
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