NPN phototransistor with 880nm infrared sensitivity, featuring a 30V collector-emitter breakdown voltage and 100mW power dissipation. This side-looking, through-hole component offers a 25° viewing angle and a 5.08mm height, with a 2-pin radial package. Operating within a -40°C to 100°C temperature range, it boasts a 8µs fall time and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSE113 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
8us
Height
5.08mm
Lead Free
Lead Free
Lead Length
12.7mm
Length
4.44mm
Lens Color
Black, Clear
Lens Style
Domed, TRANSPARENT
Max Input Current
100uA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Side View
Output Power
100mW
Output Voltage
30V
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
DC Rated Voltage
30V
Wavelength
880nm
Weight
0.135g
Width
2.54mm
Compliance
RoHS
Compliant
Datasheet
Onsemi QSE113 Datasheet
Download the complete datasheet for Onsemi QSE113 to view detailed technical specifications.
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