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Technical Specifications
Onsemi QVB11134 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Lead Free | Lead Free |
| Max Collector Current | 40mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole, Flanges, Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Configuration | Phototransistor |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | Yes |
| Series | QVB |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QVB11134 Datasheet
Download the complete datasheet for Onsemi QVB11134 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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