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Technical Specifications
Onsemi QVE00039 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Contact Plating | Tin, Matte |
| Fall Time | 50000ns |
| Forward Current | 50mA |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Configuration | Phototransistor |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Response Time | 50us |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | No |
| Wavelength | 940nm |
| Weight | 2.448g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi QVE00039 Datasheet
Download the complete datasheet for Onsemi QVE00039 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.