ONSEMI

RFD3055LESM9A

Datasheet

Onsemi

RFD3055LESM9A

Name: RFD3055LESM9A Onsemi
Brand: Onsemi
SKU: RFD3055LESM9A

N-Ch MOSFET 60V 11A 107mR TO-252AA SMT

N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 107mΩ drain-source on-resistance at a nominal 3V gate-source voltage. This surface-mount component, packaged in TO-252AA, supports a maximum power dissipation of 38W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include an 8ns turn-on delay and 39ns fall time.

PackageTO-252AA

Current Rating11A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi RFD3055LESM9A technical specifications.

General

Package/Case	TO-252AA
Continuous Drain Current (ID)	11A
Current Rating	11A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	107mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	107mR
Element Configuration	Single
Fall Time	39ns
Gate to Source Voltage (Vgs)	16V
Height	2.39mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	38W
Mount	Surface Mount
Nominal Vgs	3V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	38W
Radiation Hardening	No
Rds On Max	107mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	3V
Turn-Off Delay Time	22ns
Turn-On Delay Time	8ns
DC Rated Voltage	60V
Weight	0.26037g
Width	6.22mm