The RFP2N10L is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a maximum power dissipation of 25W. The device is rated for a continuous drain current of 2A and has a gate to source voltage of 10V. The RFP2N10L is not RoHS compliant and contains lead.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi RFP2N10L technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 1.05R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi RFP2N10L Datasheet
Download the complete datasheet for Onsemi RFP2N10L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.