PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector current of -500mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 300mW. Supplied in a 10000-piece tape and reel, this component is RoHS compliant and Halogen Free.
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Onsemi SBC807-40LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector-emitter Voltage-Max | 700mV |
| Continuous Collector Current | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
| RoHS | Compliant |
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