NPN Bipolar Junction Transistor (BJT) in a 3-lead SOT-23 (TO-236) package, supplied on a 3000-piece tape and reel. Features a collector-emitter voltage (VCEO) of 45V, collector current (IC) up to 500mA, and a transition frequency (fT) of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. This component is RoHS and Halogen Free compliant, designed for automotive applications with AEC-Q101 qualification.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
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Technical Specifications
Onsemi SBC817-40LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
1.11mm
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
100MHz
Width
2.64mm
Compliance
RoHS
Compliant
Datasheet
Onsemi SBC817-40LT1G Datasheet
Download the complete datasheet for Onsemi SBC817-40LT1G to view detailed technical specifications.
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