PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 65V Collector-Emitter Voltage (VCEO) and 100mA Continuous Collector Current. Offers a minimum hFE of 220 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with 300mW power dissipation. Packaged on a 3000-piece tape and reel, this component is RoHS compliant and lead-free.
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Onsemi SBC856BLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Height | 1.11mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 2.64mm |
| RoHS | Compliant |
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