PNP Bipolar Junction Transistor in SOT-223-4 package. Features 80V collector-emitter breakdown voltage and 1.5A maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates within a temperature range of -65°C to 150°C with 1.5W power dissipation. Supplied on a 1000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency50MHz
PackageSOT-223-4
PolarityPNP
Power1.5W
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Technical Specifications
Onsemi SBCP53-16T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBCP53-16T1G Datasheet
Download the complete datasheet for Onsemi SBCP53-16T1G to view detailed technical specifications.
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