The SBSP52T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It is packaged in a SOT-223-4 package and is lead-free and halogen-free. The transistor has a maximum power dissipation of 800mW and operates over a temperature range of -65°C to 150°C. It is RoHS compliant and available in quantities of 1000 per reel.
PackageSOT-223-4
PolarityNPN
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Technical Specifications
Onsemi SBSP52T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 1.3V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SBSP52T1G Datasheet
Download the complete datasheet for Onsemi SBSP52T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.