The SBSP52T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It is packaged in a SOT-223-4 package and is lead-free and halogen-free. The transistor has a maximum power dissipation of 800mW and operates over a temperature range of -65°C to 150°C. It is RoHS compliant and available in quantities of 1000 per reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi SBSP52T1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-223-4 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 1.3V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SBSP52T1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Onsemi SBSP52T1G
Notice PD16210 detailing the transition from leaded to lead-free (RoHS compliant) versions of various ON Semiconductor components, including acquired Analog Devices products.
