P-channel enhancement mode Power MOSFET with a maximum drain-source voltage of 20V and continuous drain current of 3.5A. Features a 6-pin surface mount package (Case SCH) with flat leads, measuring 1.6mm x 1.5mm x 0.56mm. Offers a low drain-source on-resistance of 72mOhm at 4.5V Vgs. Operates across a temperature range of -55°C to 150°C.
Onsemi SCH1343-TL-H technical specifications.
| Package/Case | Case SCH |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 0.56 |
| Seated Plane Height (mm) | 0.56 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 3.5A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1220@10VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
