P-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 10A continuous drain current. This single-element transistor is housed in a 3-pin (3+Tab) TP package with a plastic construction, designed for through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±10V, a maximum drain-source on-resistance of 112 mOhm at 4.5V, and a typical gate charge of 8 nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageTP
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi SFT1341-E technical specifications.
General
| Package/Case | TP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 10A |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 650@20VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi SFT1341-E Datasheet
Download the complete datasheet for Onsemi SFT1341-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.