The SGM2N60UFTF is a 600V insulated gate bipolar transistor with a maximum collector current of 2.4A and a maximum power dissipation of 2.1W. It is packaged in a surface-mount SOT-223-4 package and is RoHS compliant. The transistor operates over a temperature range of -55°C to 150°C and is suitable for use in a variety of applications. The SGM2N60UFTF is manufactured by Onsemi and is available in quantities of 4000 per reel.
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Onsemi SGM2N60UFTF technical specifications.
| Package/Case | SOT-223-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 2.4A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 2.4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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