The SGM2N60UFTF is a 600V insulated gate bipolar transistor with a maximum collector current of 2.4A and a maximum power dissipation of 2.1W. It is packaged in a surface-mount SOT-223-4 package and is RoHS compliant. The transistor operates over a temperature range of -55°C to 150°C and is suitable for use in a variety of applications. The SGM2N60UFTF is manufactured by Onsemi and is available in quantities of 4000 per reel.
PackageSOT-223-4
Current Rating2.4A
MountingSurface Mount
Power2.1W
Quick Jump:
Technical Specifications
Onsemi SGM2N60UFTF technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 2.4A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 2.4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SGM2N60UFTF Datasheet
Download the complete datasheet for Onsemi SGM2N60UFTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
