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Technical Specifications
Onsemi Si3443DV technical specifications.
General
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
640@10VpF
Maximum Power Dissipation
1600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Pin Count
6
Package/Case
TSOT-23
Package Family Name
SOT
Compliance
RoHS
Yes
RoHS Version
2011/65/EU, 2015/863
Datasheet
Onsemi Si3443DV Datasheet
Download the complete datasheet for Onsemi Si3443DV to view detailed technical specifications.
No datasheet is available for this part.