The Si3443DV is a single quad drain enhancement P-channel MOSFET with a maximum drain source voltage of 20V and a maximum continuous drain current of 4A. It features a maximum power dissipation of 1600mW and a typical gate charge of 7.2nC at a Vgs of 4.5V. The device is packaged in a TSOT-23 package and has a typical input capacitance of 640pF at a Vds of 10V. The Si3443DV operates over a temperature range of -55 to 150°C and is suitable for use in a variety of applications.
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| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 640@10VpF |
| Maximum Power Dissipation | 1600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Pin Count | 6 |
| Package/Case | TSOT-23 |
| Package Family Name | SOT |
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
These are design resources that include the Onsemi Si3443DV
Onsemi product discontinuance notice (PD23933X) for various power management, logic, and discrete components with last time buy and ship dates.
Product discontinuance notice PD24446XA from onsemi for multiple MOSFET and discrete devices. Includes Last Time Buy and Last Ship dates with no direct replacements listed.
