N-channel and P-channel MOSFET transistor, 30V drain-source breakdown voltage, 3.9A continuous drain current, and 65mΩ maximum drain-source on-resistance. Features a 3V threshold voltage, 235pF input capacitance, and 18ns turn-on/turn-off delay times. Packaged in an 8-pin SOIC surface-mount case, this component operates from -55°C to 150°C with a 2W maximum power dissipation. RoHS compliant and lead-free.
PackageSOIC
Current Rating3.9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi SI4532DY technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.9A
Current Rating
3.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
65MR
Fall Time
6ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
235pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
65mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
18ns
Turn-On Delay Time
18ns
DC Rated Voltage
30V
Weight
0.2304g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi SI4532DY Datasheet
Download the complete datasheet for Onsemi SI4532DY to view detailed technical specifications.
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