Dual NPN Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a Collector-Emitter Voltage (VCEO) of 40V, maximum collector current of 200mA, and a transition frequency of 300MHz. Offers a minimum hFE of 100 and a Collector-Emitter Saturation Voltage of 300mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 150mW. Packaged on a 3000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency300MHz
PackageSOT-363-6
PolarityNPN
Power150mW
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Technical Specifications
Onsemi SMBT3904DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SMBT3904DW1T1G Datasheet
Download the complete datasheet for Onsemi SMBT3904DW1T1G to view detailed technical specifications.
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